| PART |
Description |
Maker |
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| ES1D ES1B ES1_SERIES_1 ES1 ES1A ES1C |
From old datasheet system
SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低损耗控制的雪崩整流
SMA ultra fast low-loss controlled avalanche rectifiers 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BY9318 BY9300 BY9304 BY9306 BY9308 BY9310 BY9312 B |
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.01 A, 8400 V, SILICON, SIGNAL DIODE
Fast high-voltage soft-recovery controlled avalanche rectifiers 0.005 A, 11200 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BYD13D BYD13G BYD13J BYD13K BYD13M |
Controlled avalanche rectifiers
|
Shenzhen Taychipst Electronic Co., Ltd
|
| 1N5059 1N5061 |
Controlled avalanche rectifiers
|
NXP
|
| SKNA202 SKNA202_36 SKNA202_40 SKNA202_42 SKNA202_4 |
Avalanche Diode 200 A, 4600 V, SILICON, RECTIFIER DIODE
Avalanche Diode 200 A, 3600 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| BYW55P BYW52P BYW53P |
Standard Controlled Avalanche Rectifiers
|
Diotec Semiconductor
|
| BY627 |
Controlled Avalanche Rectifier Diodes
|
Philips
|
| S1B S1K S1A S1G S1D S1M S1 S1J |
SMA controlled avalanche rectifiers
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| S1 S1D |
SMA controlled avalanche rectifiers
|
NXP
|
| BYD17M BYD17D BYD17J BYD17K BYD17G |
GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS
|
EIC discrete Semiconductors
EIC discrete Semiconduc...
|
